Indium Phosphide Polycrystalline is primarily used as a semiconductor material and has significant applications in optical fiber communication technology. It possesses characteristics such as high saturated electron drift velocity, suitable emission wavelength for low-loss optical fiber communication, strong radiation resistance, good thermal conductivity, high photoelectric conversion efficiency, and a relatively wide forbidden band gap. Therefore, indium phosphide substrates can be widely used in the manufacture of optical module devices, sensor devices, high-end radio frequency devices, and more. Specifically, in optoelectronic devices such as light sources (LEDs) and detectors (APD avalanche photodiodes), indium phosphide is mainly used in optical fiber communication systems. Additionally, it can integrate lasers, photodetectors, and amplifiers to form optoelectronic integrated circuits, which are essential components of the new generation of 40Gb/s communication systems.